The mission statement of the Department of Electrical and Computer Engineering is to “To serve and lead the state of Indiana, the nation, and the world-wide profession of electrical and computer engineering, by educating the next generation of engineers, by discovery that advances fundamental knowledge and its applications, and by innovation and engagement that address global challenges of societal impact.” Below are some publications ranging on pertinent subjects within the industry, written and researched by distinguished faculty within the department of electrical and computer engineering at Purdue University.

Submissions from 2008

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A low-cost force sensor for electromechanical actuation systems, K. A. Rosenbaum, S. D. Pekarek, T. Baudendistel, et al.

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A comprehensive analysis of off-state stress in drain extended PMOS transistors: Theory and characterization of parametric degradation and dielectric failure, D. Varghese, V. Reddy, H. Shichijo, et al.

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A coded-feedback construction of locally minimum-cost multicast network codes, Chih-Chun Wang

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Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate, T. Yang, Y. Liu, P. D. Ye, et al.

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A new Kalman-filter-based framework for fast and accurate visual tracking of rigid objects, Yoon Youngrock, A. Kosaka, and A. C. Kak

Submissions from 2007

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Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation, Gengchiau Liang, Neophytos Neophytou, Mark S. Lundstrom, et al.

Submissions from 2006

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Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias, Siyuranga O. Koswatta, Sayed Hasan, and Mark S. Lundstrom

Submissions from 2005

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On the role of phonon scattering in Carbon Nanotube Field-Effect Transistors, Jing Guo and Mark S. Lundstrom

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Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors, Siyuranga O. Koswatta, Mark S. Lundstrom, M. P. Anantram, et al.

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A Theoretical Investigation of Surface Roughness Scattering in Silicon Nanowire Transistors, Jing Wang, Eric Polizzi, Avik Ghosh, et al.

Submissions from 2004

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High-Field Quasi-Ballistic Transport in Short Carbon Nanotubes, Ali Javey, Jing Guo, Magnus Paulsson, et al.

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A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective Mass Approximation, Jing Wang, Eric Polizzi, and Mark S. Lundstrom

Submissions from 2003

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A simple quantum mechanical treatment of scattering in nanoscale transistors, Rajesh Venugopal, Magnus Paulsson, Sebastien Goasguen, et al.

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Quantum mechanical analysis of channel access geometry and series resistance in nanoscale transistors, R. Venugopal, S. Goasguen, Supriyo Datta, et al.

Submissions from 2002

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Metal–insulator–semiconductor electrostatics of carbon nanotubes, Jing Guo, Sebastien Goasguen, Mark S. Lundstrom, et al.

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Performance projections for ballistic carbon nanotube field-effect transistors, Jing Guo, Mark S. Lundstrom, and Supriyo Datta

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A Drift-Diffusion Equation for Ballistic Transport in Nanoscale Metal-Oxide-Semiconductor Field Effect Transistors, Jung-Hoon Rhew and Mark S. Lundstrom

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Simulating Quantum Transport in Nanoscale MOSFETs: Real vs. Mode Space Approaches, Rajesh Venugopal, Z. Ren, Supriyo Datta, et al.

Submissions from 2001

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Simulating Quasi-Ballistic Transport in Si Nanotransistors, Kausar Banoo, Jung-Hoon Rhew, Mark S. Lundstrom, et al.

Submissions from 1998

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Formulation of the Boltzmann Equation as a Multi-Mode Drift-Diffusion Equation, Kausar Banoo, Farzin Assad, and Mark S. Lundstrom

Submissions from 1997

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Electrical characteristics of nearly relaxed InAs/GaP heterojunctions, E H. Chen, T. P. Chin, J. M. Woodall, et al.

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Technique for measurement of the minority carrier mobility with a bipolar junction transistor, S. L. D'Souza, Michael R. Melloch, Mark S. Lundstrom, et al.

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Reflection Anistropy Spectroscopy Study of the Near Surface Electric Field in Low-Temperature Grown GaAs (001), Todd Holden, Fred H. Pollak, J. L. Freeouf, et al.

Submissions from 1995

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Transition matrix approach for Monte Carlo simulation of coupled electron/phonon/photon dynamics, Muhammad A. Alam and Mark S. Lundstrom

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Temperature dependence of minority and majority carrier mobilities in degenerately doped GaAs, Michael L. Lovejoy, Michael R. Melloch, and Mark S. Lundstrom

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On the carrier mobility in forward-biased semiconductor barriers, Mark S. Lundstrom and Shin'ichi Tanaka

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On the Carrier Mobility in Forward-Biased Semiconductor Barriers, Mark S. Lundstrom and S. I. Tanaka

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Very low resistance nonalloyed ohmic contacts using low-temperature molecular beam epitaxy of GaAs, M. P. Patkar, T. P. Chin, J. M. Woodall, et al.

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Characterization of photon recycling in thin crystalline GaAs light emitting diodes, M. P. Patkar, M. S. Lundstrom, and Michael R. Melloch

Submissions from 1994

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Effective Bandgap Shrinkage in GaAs, E. S. Harmon, Michael R. Melloch, and Mark S. Lundstrom

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Thermal velocity limits to diffusive electron transport in thin‐base np+n GaAs bipolar transistors, E. S. Harmon, Michael R. Melloch, Mark S. Lundstrom, et al.

Submissions from 1993

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A Spectral Flux Method for Solving the Boltzmann Equation, Muhammad A. Alam, Mark A. Stettler, and Mark S. Lundstrom

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Experimental Observation of a Minority Electron Mobility Enhancement in degenerately doped p-Type GaAs, E. S. Harmon, Michael L. Lovejoy, Michael R. Melloch, et al.

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Minority-carrier mobility enhancement in p+ InGaAs lattice matched to InP, E. S. Harmon, Michael L. Lovejoy, Michael R. Melloch, et al.

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Concentration‐dependent optical‐absorption coefficient in n‐type GaAs, Gregory Benedict Lush, H. F. MacMillan, S. Asher, et al.

Submissions from 1992

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Minority electron transport in InP/InGaAs heterojunction bipolar transistors, Paul Dodd and Mark S. Lundstrom

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Minority Hole Mobility in n+ GaAs, Michael L. Lovejoy, Michael R. Melloch, Mark S. Lundstrom, et al.

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Comparative study of minority electron properties in p+-GaAs doped with beryllium and carbon, Michael L. Lovejoy, Michael R. Melloch, Mark S. Lundstrom, et al.

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Microsecond Lifetimes and Low Interface Recombination Velocities in Moderately Doped n-GaAs Thin Films, Gregory Benedict Lush, D. H. Levi, H. F. MacMillan, et al.

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A study of minority carrier lifetime versus doping concentration in n‐type GaAs grown by metalorganic chemical vapor deposition, Gregory Benedict Lush, H. F. MacMillan, B. M. Keyes, et al.

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Self‐consistent scattering matrix calculation of the distribution function in semiconductor devices, Mark A. Stettler and Mark S. Lundstrom

Submissions from 1991

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Experimental determination of the effects of degenerate Fermi statistics on heavily p‐doped GaAs, E. S. Harmon, Michael R. Melloch, Mark S. Lundstrom, et al.

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Zero-Field Time-of-Flight Measurements of Electron Diffusion in P+-GaAs, Michael L. Lovejoy, B. M. Keyes, M. E. Klausmeier-Brown, et al.

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Transistor-Based Studies of Heavy Dop-ing Effects in n-GaAs, M. P. Patkar, Mark S. Lundstrom, and Michael R. Melloch

Submissions from 1990

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Surface passivation effects of As2S3 glass on self‐aligned AlGaAs/GaAs heterojunction bipolar transistors, H. L. Chuang, M. S. Carpenter, Michael R. Melloch, et al.

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Transistor-based measurements of electron injection currents in p-type GaAs doped 1018–1020 cm-3, M. E. Klausmeier-Brown, M. R. Melloch, and Mark S. Lundstrom

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High‐efficiency Al0.22Ga0.78As solar cells grown by molecular beam epitaxy, Michael R. Melloch, S. P. Tobin, C. Bajgar, et al.

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Orientation-dependent perimeter recombination in GaAs diodes, T. B. Stellwag, Michael R. Melloch, Mark S. Lundstrom, et al.

Submissions from 1989

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Effective minority‐carrier hole confinement of Si‐doped, n+‐n GaAs homojunction barriers, H. L. Chuang, M. E. Klausmeier-Brown, Michael R. Melloch, et al.

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Consequences of valley filtering on abrupt junction AlGaAs/GaAs heterojunction bipolar transistors, Amitava Das and Mark S. Lundstrom

Submissions from 1988

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Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs pn diodes, M. S. Carpenter, Michael R. Melloch, M. S. Lundstrom, et al.

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Evidence for band-gap narrowing effects in Be-doped, p-p+ GaAs homojunction barriers, H. L. Chuang, Paul David DeMoulin, M. E. Klausmeier-Brown, et al.

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Effects of Heavy Impurity Doping on Electron Injection in p+-n GaAs Diodes, M. E. Klausmeier-Brown, Mark S. Lundstrom, Michael R. Melloch, et al.

Submissions from 1987

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Importance of Space-Charge Effects in Resonant Tunneling Devices, M. Cahay, M. McLennan, D. Datta, et al.

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Bias‐dependent photoresponse of p+in GaAs/AlAs/GaAs diodes, Michael R. Melloch, C. P. McMahon, Mark S. Lundstrom, et al.

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Recombination-current suppression in GaAs p-n junctions grown on AlGaAs buffer layers by molecular-beam epitaxy, D. P. Rancour, M. R. Melloch, R. F. Pierret, et al.

Submissions from 1986

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Proposed Structure for Large Quantum Interference Effects, S. Datta, Michael R. Melloch, S. Bandyopadhyay, et al.

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Effect of impurity trapping on the capacitance‐voltage characteristics of n‐GaAs/N‐AlGaAs heterojunctions, K. L. Tan, Mark S. Lundstrom, and Michael R. Melloch

Submissions from 1975

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Magnetoelastic Rayleigh Wave Convolver, William P. Robbins and Mark S. Lundstrom