Very low resistance nonalloyed ohmic contacts using low-temperature molecular beam epitaxy of GaAs

Authors

M. P. Patkar, Purdue University, School of Electrical Engineering
T. P. Chin, Purdue University, School of Electrical Engineering
J. M. Woodall, Purdue University, School of Electrical Engineering
Mark S. Lundstrom, Purdue University, School of Electrical EngineeringFollow
Michael R. Melloch, Purdue University, School of Electrical EngineeringFollow

Abstract

Ex situ nonalloyed ohmic contacts were made to n- and p‐type GaAs using low‐temperature molecular beam epitaxy. For n‐type GaAs, Ag, and Ti/Au nonalloyed contacts displayed specific contact resistitivities of mid 10^-7 ohm cm². For p‐type GaAs, nonalloyed Ti/Au contacts with specific contact resistivities of about 10^-7 ohm cm² were obtained.

Comments

Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters: Volume 66, Issue 11. 10.1063/1.113218 and may be found at http://dx.doi.org/10.1063/1.113218. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (1994) M. P. Patkar, T. P. Chin, J. M. Woodall, M. S. Lundstrom, and M. R. Melloch. This article is distributed under a Creative Commons Attribution 3.0 Unported License.

Date of this Version

1995

Published in:

Applied Physics Letters: Volume 66, Issue 11, 10.1063/1.113218