Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors

Authors

Siyuranga O. Koswatta, Purdue UniversityFollow
Mark S. Lundstrom, Purdue UniversityFollow
M. P. Anantram, Purdue University School of Electrical and Computer Engineering
Dmitri E. Nikonov, Intel Corporation, Components Research

Abstract

Electronic transport in a carbon nanotube metal-oxide-semiconductor field effect transistor MOSFET is simulated using the nonequilibrium Green’s functions method with the account of electron-phonon scattering. For MOSFETs, ambipolar conduction is explained via phonon-assisted band-to-band Landau-Zener tunneling. In comparison to the ballistic case, we show that the phonon scattering shifts the onset of ambipolar conduction to more positive gate voltage thereby increasing the off current. It is found that the subthreshold swing in ambipolar conduction can be made as steep as 40 mV/decade despite the effect of phonon scattering

Comments

Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 87, 253107 (2005) and may be found at http://dx.doi.org/10.1063/1.2146065. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2005) Siyuranga O. Koswatta, Mark S. Lundstrom, M. P. Anantram and Dmitri E. Nikonov. This article is distributed under a Creative Commons Attribution 3.0 Unported License.

Date of this Version

2005

Published in:

Appl. Phys. Lett. 87, 253107 (2005)