Abstract
Perimeter recombination currents affect the performance of GaAs-based devices such as solar cells, heterojunction bipolar transistors, and injection lasers. We report that the n SEf 2 perimeter recombination current has a strong orientation dependence. More than a factor of five variation in the surface recombination current at mesa-etched edges has been observed. These results suggest that with proper device design, perimeter recombination currents could be substantially reduced.
Date of this Version
1990
DOI
10.1063/1.103108
Published in:
Appl. Phys. Lett. 56 ("\7), 23 April 1990
Comments
Copyright (1990) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 56 (17), 23 April 1990 and may be found at http://dx.doi.org/10.1063/1.103108. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (1990) T. B. Stellwag, M. R. Melloch, M. S. Lundstrom, M. S. Carpenter, and R. F. Pierret. This article is distributed under a Creative Commons Attribution 3.0 Unported License.