Abstract
The electrical performance of Be‐doped, p‐p+ GaAs homojunction barriers is characterized and analyzed. The results of the analysis show that minority‐carrier electrons, at 300 K, have a mobility of 4760 cm2/V s at a hole concentration of 2.3×1016 cm−3, and that the effective recombination velocity for these homojunction barriers is about 6×104 cm/s. We present evidence that this unexpectedly high recombination velocity is a consequence of an effective reduction in band gap due to the heavy impurity doping. The effective band‐gap shrinkage in this Be‐doped material grown by molecular‐beam epitaxy appears to be comparable to that already observed for Zn‐doped GaAs grown by metalorganic chemical vapor deposition. This work demonstrates that so‐called band‐gap narrowing effects significantly influence the electrical performance of GaAs devices.
Date of this Version
1988
DOI
10.1063/1.342102
Published in:
J. Appl. Phys. 64 (11), 1 December 1988
Comments
Copyright (1988) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 64 (11), 1 December 1988 and may be found at http://dx.doi.org/10.1063/1.342102. The following article has been submitted to/accepted by Journal of Applied Physics. Copyright (1988) H. L. Chuang, P. D. DeMoulin, M. E. Klausmeier‐Brown, M. R. Melloch, and M. S. Lundstrom. This article is distributed under a Creative Commons Attribution 3.0 Unported License.