Abstract
Carbon nanotube metal-insulator-semiconductor capacitors are examined theoretically. For the densely packed array of nanotubes on a planar insulator, the capacitance per tube is reduced due to the screening of the charge on the gate plane by the neighboring nanotubes. In contrast to the silicon metal-oxide-semiconductor capacitors, the calculated C-VC-V curves reflect the local peaks of the one-dimensional density-of-states in the nanotube. This effect provides the possibility to use C-VC-V measurements to diagnose the electronic structures of nanotubes. Results of the electrostatic calculations can also be applied to estimate the upper-limit on-current of carbon nanotube field-effect transistors.
Date of this Version
2002
Published in:
Applied Physics Letters: Volume 81, Issue 8. doi: 10.1063/1.1502188
Comments
Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 81, Issue 8. doi: 10.1063/1.1502188 and may be found at http://dx.doi.org/10.1063/1.1502188. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2002) Jing Guo, Sebastien Goasguen, Mark Lundstrom, and Supriyo Datta. This article is distributed under a Creative Commons Attribution 3.0 Unported License.