Abstract
We have investigated the dark current-voltage characteristics of GaAs pn homojunctions whose surfaces have been passivated with NuzS and (NH4)2S chemical treatments. Reductions in 2kTpcrimeter recombination currents by a factor of 3.2 were obtained for the two treatments. A shunt leakage, observed at low forward bias for the NazS treated devices, is virtually eliminated with the {NH4hS treatment. It is also shown that even the high quality, large area (0.25 cm1 ) pn diodes used in this study are dominated by 2kTedge currents before passivation.
Date of this Version
1988
DOI
10.1063/1.99563
Published in:
Appl. Phys. Lett. 52 (25), 20 June 1988
Comments
Copyright (1988) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 52 (25), 20 June 1988 and may be found at http://dx.doi.org/10.1063/1.99563. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (1988) M. S. Carpenter, M. R. Melloch, and M. S. Lundstrom S. P. Tobin. This article is distributed under a Creative Commons Attribution 3.0 Unported License.