Abstract

The integration of graphene into existing state-of-the-art semiconductor manufacturing is a topic of worldwide interest. With its unprecedented electrical, thermal and mechanical properties, graphene is ideally suited for back-end of line (BEOL) technology to boost the performance of on-chip copper (Cu) interconnects. However, the lack of BEOL compatible methods has stymied the true evaluation of Cu/graphene hybrid (Cu-G) technology. The objectives of this thesis proposal are to demonstrate BEOL-compatible graphene growth techniques, and explore various avenues for practical integration of graphene in order to achieve better electrical, thermal and reliability metrics than traditional interconnect technology.

Degree Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

Department

Electrical and Computer Engineering

Date of Award

January 2016

First Advisor

Zhihong Chen

Committee Member 1

David B Janes

Committee Member 2

Amy M Marconnet

Committee Member 3

Xiulin Ruan

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