High Performance Inversion-type InGaAs MOSFET with ALD High-k Gate Dielectric

Author

Y. Xuan, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue UniversityFollow
Y. Q. Wu, Birck Nanotechnology Center and Electrical and Computer Engineering, Purdue UniversityFollow
H. C. Lin, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University
T. Shen, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue UniversityFollow
P. D. Ye, Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue UniversityFollow

Abstract

The silicon basec complementary metal-oxide-semicoonductor (CMOS) technology now faces ever shrinking device dimensions and demands for higher performance. The latest advance in CMOS industry suggests that ALD high-k dielectrics developed for silicon may pave the way for novel channel materials in future CMOS integrated circuits. In this work, high performance inversion-type enhancement mode InGaAs MOSFET with ex situ ALD gate dielectric and 0.5 micron gate length is demonstrated for the first time with maximum drain current of 367mA/mm and extrinsic transconductance of 130mS/mm.

Keywords

atomic layer deposition

Date of this Version

April 2007

Recommended Citation

Xuan, Y.; Wu, Y. Q.; Lin, H. C.; Shen, T.; and Ye, P. D., "High Performance Inversion-type InGaAs MOSFET with ALD High-k Gate Dielectric" (2007). Birck Poster Sessions. Paper 11.
https://docs.lib.purdue.edu/nanoposter/11