Electron-phonon renormalization of electronic band gaps of semiconductors: Isotopically enriched silicon

Authors

S. Tsoi
H. Alawadhi
X. Lu
J. W. Ager
C. Y. Liao
H. Riemann
E. E. Haller
S. Rodriguez
A. K. Ramdas

Published in:

Physical Review B 70,19 (2004) 193201;

Link to original published article:

http://dx.doi.org/10.1103/PhysRevB.70.193201

Abstract

Photoluminescence and wavelength-modulated transmission spectra displaying phonon-assisted indirect excitonic transitions in isotopically enriched Si-28, Si-29, Si-30, as well as in natural Si, have yielded the isotopic mass (M) dependence of the indirect excitonic gap (E-gx) and the relevant phonon frequencies. Interpreting these measurements on the basis of a phenomenological theory for (partial derivativeE(gx)/partial derivativeM), we deduce E-gx(M=infinity)=(1213.8+/-1.2) meV, the purely electronic value in the absence of electron-phonon interaction and volume changes associated with anharmonicity.

Keywords

indirect energy-gap;; temperature-dependence;; isotope dependence;; single-crystal;; absorption;; diamond;; si;; ge;; luminescence;; germanium

Date of this Version

January 2004