Abstract
Photoluminescence and wavelength-modulated transmission spectra displaying phonon-assisted indirect excitonic transitions in isotopically enriched Si-28, Si-29, Si-30, as well as in natural Si, have yielded the isotopic mass (M) dependence of the indirect excitonic gap (E-gx) and the relevant phonon frequencies. Interpreting these measurements on the basis of a phenomenological theory for (partial derivativeE(gx)/partial derivativeM), we deduce E-gx(M=infinity)=(1213.8+/-1.2) meV, the purely electronic value in the absence of electron-phonon interaction and volume changes associated with anharmonicity.
Published in:
Physical Review B 70,19 (2004) 193201;
Link to original published article:
http://dx.doi.org/10.1103/PhysRevB.70.193201
Keywords
indirect energy-gap;; temperature-dependence;; isotope dependence;; single-crystal;; absorption;; diamond;; si;; ge;; luminescence;; germanium
Date of Version
January 2004
Recommended Citation
Tsoi, S.; Alawadhi, H.; Lu, X.; Ager, J. W.; Liao, C. Y.; Riemann, H.; Haller, E. E.; Rodriguez, S.; and Ramdas, A. K., "Electron-phonon renormalization of electronic band gaps of semiconductors: Isotopically enriched silicon" (2004). Department of Physics and Astronomy Faculty Publications. Paper 483.
https://docs.lib.purdue.edu/physics_articles/483