Abstract
Low temperature wavelength-modulated reflectivity measurements of isotopically engineered ZnO samples have yielded the dependence of their A, B, and C excitonic band gaps on the isotopic masses of Zn and O. The observed dependence is analyzed in terms of the band gap renormalization by zero-point vibrations via electron-phonon interaction and the volume dependence on isotopic mass. A simplified, two-oscillator model, employed in the analysis, yields zero-point renormalizations of the band gaps, -154 +/- 14 meV (A), -145 +/- 12 meV (B), and -169 +/- 14 meV (C), for ZnO with natural isotopic composition.
Published in:
Physical Review B 74,16 (2006) 165203;
Link to original published article:
http://dx.doi.org/10.1103/PhysRevB.74.165203
Keywords
indirect energy-gap;; spatial-dispersion;; semiconductors;; spectra;; photoluminescence;; crystals;; diamond;; transmission;; reflectance;; germanium
Date of Version
January 2006
Recommended Citation
Tsoi, S.; Lu, X.; Ramdas, A. K.; Alawadhi, H.; Grimsditch, M.; Cardona, M.; and Lauck, R., "Isotopic-mass dependence of the A, B, and C excitonic band gaps in ZnO at low
temperatures" (2006). Department of Physics and Astronomy Faculty Publications. Paper 291.
https://docs.lib.purdue.edu/physics_articles/291