Abstract
The E-0(') direct transition of Si between its valence band maximum (Gamma(8)(+)) and conduction band minimum (Gamma(6)(-)) and the E-1 direct transition along < 111 > are studied in isotopically enriched Si-28, Si-29, and Si-30 employing photomodulated reflectivity. Their energies (E-G) at low temperature are found to increase with increasing isotopic mass (M) according to E-G(M)=E-G(infinity)-CM-1/2, as predicted in the theory for band gap renormalization by zero-point vibrations through electron-phonon interaction and volume changes associated with anharmonicity. Here E-G(infinity) is the energy gap of the "infinitely" massive isotope, free of renormalization effects.
Published in:
Physical Review B 72,15 (2005) 153203;
Link to original published article:
http://dx.doi.org/10.1103/PhysRevB.72.153203
Keywords
temperature-dependence;; interband transitions;; silicon;; semiconductors;; electroreflectance;; ge;; modulation;; spectra
Date of Version
January 2005
Recommended Citation
Tsoi, S.; Rodriguez, S.; Ramdas, A. K.; Ager, J. W.; Riemann, H.; and Haller, E. E., "Isotopic dependence of the E-0 ' and E-1 direct gaps in the electronic band structure of Si" (2005). Department of Physics and Astronomy Faculty Publications. Paper 244.
https://docs.lib.purdue.edu/physics_articles/244