Semi-3D silicon detector and initial results of its performance
Published in:
Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment 552,1-2 (2005) 112-117;
Link to original published article:
http://dx.doi.org/10.1016/j.nima.2005.06.016
Abstract
A novel p(+)-n(+)/n/n(+) semi-3D structure configuration has been developed and it is expected to improve the radiation hardness of silicon sensors after space charge sign inversion (SCSI). A special configuration of serni-3D sensors facilitates depletion from both sides of the sensors after SCSI and reduces the depletion voltage by half or more. The reduction of depletion voltage will increase the ability of silicon detectors to operate in the presence of severe bulk radiation damage expected at high-intensity colliders. Semi-3D sensors can be manufactured using only single-sided, conventional planar processing. Electrical characterization of semi-3D test structures through I- V and C- V curves before and after irradiation is presented here. (c) 2005 Elsevier B.V. All rights reserved.
Keywords
semiconductor sensors;; semi-3d sensors;; radiation hardness
Date of this Version
1-1-2005