Nanostructures in GaAs fabricated by molecular beam epitaxy
Abstract
We review three novel techniques whereby the highly uniform two-dimensional films produced by molecular beam epitaxy (MBE) can be further patterned into nanowires or nanostructures having quantum confinement in all three dimensions. These techniques have the potential of greatly extending the power and utility of the MBE method. (c) 2005 Lucent Technologies Inc.
Published in:
Bell Labs Technical Journal 10,3 (2005) 151-159;
Link to original published article:
http://dx.doi.org/10.1002/bltj.20110
Keywords
quantum wire
Date of Version
1-1-2005
Recommended Citation
Pfeiffer, L. N.; West, K. W.; Willett, R. L.; Akiyama, H.; and Rokhinson, L. P., "Nanostructures in GaAs fabricated by molecular beam epitaxy" (2005). Department of Physics and Astronomy Faculty Publications. Paper 209.
https://docs.lib.purdue.edu/physics_articles/209
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