Published in:
Applied Physics Letters 88,19 (2006) 192102;
Link to original published article:
http://dx.doi.org/10.1063/1.2202100
Abstract
We demonstrate experimentally single-electron quantum dots using a single-top-gate transistor configuration on a composite quantum well. The data indicate a 15 meV Coulomb charging energy and a 20 meV orbital energy spacing, which imply a quantum dot of 20 nm in diameter. Combining with the inherent advantage of a large electron g(*) factor in InAs, our demonstration is significant for a solid state implementation of a scalable quantum computing. (c) 2006 American Institute of Physics.
Keywords
double-quantum dot;; devices
Date of this Version
January 2006
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