Abstract
We demonstrate experimentally single-electron quantum dots using a single-top-gate transistor configuration on a composite quantum well. The data indicate a 15 meV Coulomb charging energy and a 20 meV orbital energy spacing, which imply a quantum dot of 20 nm in diameter. Combining with the inherent advantage of a large electron g(*) factor in InAs, our demonstration is significant for a solid state implementation of a scalable quantum computing. (c) 2006 American Institute of Physics.
Published in:
Applied Physics Letters 88,19 (2006) 192102;
Link to original published article:
http://dx.doi.org/10.1063/1.2202100
Keywords
double-quantum dot;; devices
Date of Version
January 2006
Recommended Citation
Jones, G. M.; Hu, B. H.; Yang, C. H.; Yang, M. J.; and Lyanda-Geller, Y. B., "Observation of one-electron charge in an enhancement-mode InAs single-electron transistor at 4.2 K" (2006). Department of Physics and Astronomy Faculty Publications. Paper 173.
https://docs.lib.purdue.edu/physics_articles/173