Abstract
We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range by the back gate and/or a second side gate. We also find that the side gated field effect is significantly stronger by electrically floating the back gate compared to grounding the back gate, consistent with the finding from electrostatic simulation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3459136]
Published in:
Applied Physics Letters 96,26 (2010)
Link to original published article:
http://dx.doi.org/10.1063/1.3459136
Date of Version
June 2010
Recommended Citation
Tian, J. F.; Jauregui, L. A.; Lopez, G.; Cao, H.; and Chen, Y. P., "Ambipolar graphene field effect transistors by local metal side gates" (2010). Department of Physics and Astronomy Faculty Publications. Paper 1331.
https://docs.lib.purdue.edu/physics_articles/1331