Abstract
The atomic force microscope (AFM) is used to study the morphology of graphene grown on 4H-SiC(000 (1) over bar). A mesh-like network of ridges with high curvature is revealed that bound atomically flat, tile-like facets of few-layer graphene (FLG). To further study the structural properties of the ridge network, nanomanipulation experiments are performed using an AFM tip to deform the ridges in both the vertical and lateral directions. From these experiments, evidence is obtained that the ridges can be displaced in both the vertical and lateral directions. In some instances, ridges are found to return to their original shape after deformation. Cross-section transmission electron microscopy (TEM) studies show that the ridges are formed by the delamination of FLG from the SiC substrate.
Published in:
New Journal of Physics 12,(2010)
Link to original published article:
http://dx.doi.org/10.1088/1367-2630/12/12/125009
Date of Version
December 2010
Recommended Citation
Prakash, G.; Bolen, M. L.; Colby, R.; Stach, E. A.; Capano, M. A.; and Reifenberger, R., "Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face
of 4H-SiC" (2010). Department of Physics and Astronomy Faculty Publications. Paper 1310.
https://docs.lib.purdue.edu/physics_articles/1310