Electrodeposition of Indium Antimonide Nanowires in Porous Anodic Alumina Membranes
Abstract
Vertical arrays of high aspect ratio (>100) InSb nanowires with diameters of similar to 20 nm have been fabricated using a Porous Anodic Alumina (PAA) template that is supported on a Si substrate with a thin layer of titanium (Ti) sandwiched between them. The process described here uses a reverse anodization technique to penetrate the hemispherical pore bottom barrier oxide layer prior to the electrodeposition process, so as to form a direct electrical contact with the underlying Ti layer. Scanning electron microscopy results demonstrate that the InSb nanowires completely fill the channels of the PAA thereby acquiring a wire diameter of about 20 nm. Raman spectrum of the InSb nanowires indicates high crystal quality.
Published in:
2010 18th Biennial University/Government/Industry Micro-Nano Symposium (2010)
Date of Version
January 2010
Recommended Citation
Mohammad, A.; Das, S. R.; Chen, Y. P.; Sands, T. D.; Janes, D. B.; and Ieee, "Electrodeposition of Indium Antimonide Nanowires in Porous Anodic Alumina Membranes" (2010). Department of Physics and Astronomy Faculty Publications. Paper 1300.
https://docs.lib.purdue.edu/physics_articles/1300