Abstract
Precise stoichiometry and departures therefrom in the composition of the tetrahedrally coordinated compound semiconductors allow impurity incorporation in more than one configuration. Ultrahigh resolution infrared spectroscopy of CdTeO at low temperatures reveals a unique sharp doublet associated with the local vibrational modes of O-Te in a (O-Te-V-Cd) complex with nearest neighbor Cd vacancy V-Cd and a single sharp line attributed to the local vibrational mode of O-Te in a perfect CdTe. The uniaxial (C-3v) symmetry of (O-Te-V-Cd) transforms to T-d symmetry at T(*)similar to 300 K, acquired due to an increasing rate of dynamic switching of the "O-Te-V-Cd" dangling bond in which the vacancy and its three next nearest neighbor Cd cations exchange positions as temperature (T) approaches T-*; for T >= T-*, the doublet thus transforms into a single, triply degenerate line.
Published in:
Physical Review Letters 96,3 (2006) 035508;
Link to original published article:
http://dx.doi.org/10.1103/PhysRevLett.96.035508
Keywords
ii-vi semiconductors;; acceptor complexes;; tunneling hydrogen;; germanium;; zincblende;; resonance;; silicon;; modes;; donor
Date of Version
January 2006
Recommended Citation
Chen, G.; Miotkowski, I.; Rodriguez, S.; and Ramdas, A. K., "Stoichiometry driven impurity configurations in compound semiconductors" (2006). Department of Physics and Astronomy Faculty Publications. Paper 128.
https://docs.lib.purdue.edu/physics_articles/128