Abstract
We propose a new guard ring geometry for n-on-p silicon particle detectors for high luminosity applications. The performance of the guard ring structure is evaluated with simulations up to a radiation fluence of 1 x 10(15) n(eq)/cm(2) using an existing three level trap model for p-type FZ silicon. The post-irradiation performance improvement of guard rings with floating field plates pointing towards the sensitive region is demonstrated. The breakdown behavior of the guard ring structure is studied as a function of oxide charge, field plate length, and oxide thickness.
Published in:
Ieee Transactions on Nuclear Science 57,5 (2010) 2978-2986;
Link to original published article:
http://dx.doi.org/10.1109/tns.2010.2063439
Date of Version
October 2010
Recommended Citation
Koybasi, O.; Bolla, G.; and Bortoletto, D., "Guard Ring Simulations for n-on-p Silicon Particle Detectors" (2010). Department of Physics and Astronomy Faculty Publications. Paper 1272.
https://docs.lib.purdue.edu/physics_articles/1272