Abstract
Atomically resolved scanning tunneling microscope images of carbon ridge defects found in few-layer graphene formed on the C-face (0001) of 4H-silicon carbide reveal a striated exterior surface formed from out-of-plane distortions of the hexagonal graphene lattice. While ridge formation is likely explained by compressive in-plane stresses coupled with the small values of the bending modulus for few-layer graphene, the striated structure along the ridges argues for a localized unidirectional stress in the material directed along the ridge length.
Published in:
Applied Physics Letters 96,8 (2010)
Link to original published article:
http://dx.doi.org/10.1063/1.3323092
Date of Version
February 2010
Recommended Citation
Harrison, S. E.; Capano, M. A.; and Reifenberger, R., "Scanning tunneling microscope study of striated carbon ridges in few-layer epitaxial
graphene formed on 4H-silicon carbide (0001)" (2010). Department of Physics and Astronomy Faculty Publications. Paper 1239.
https://docs.lib.purdue.edu/physics_articles/1239