Abstract
InSb nanowires have been formed by electrodeposition in porous anodic alumina templates and employed as transistor channels. The 100 nm diameter nanowires had a zinc blende crystal structure. Single-nanowire field-effect transistors (NW-FETs) with a channel length of 500 nm exhibited on-currents of similar to 40 mu A, on/off ratios of similar to 16-20, drain conductances of similar to 71 mu S and field-effect electron mobility of similar to 1200 cm(2) V(-1) s(-1). Compared with reported NW-FETs, the on-current is large and the current saturation occurs at low source-drain voltages. These characteristics can be understood in terms of velocity saturation effects with enhanced scattering. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3587638]
Keywords
SILICON; GROWTH
DOI
10.1063/1.3587638
Citation
Appl. Phys. Lett. 98, 243504 (2011)
Date of this Version
6-13-2011
Recommended Citation
Das, Suprem; Delker, Collin J.; Zakharov, Dmitri; Chen, Yong P.; Sands, Timothy D.; and Janes, David B., "Room temperature device performance of electrodeposited InSb nanowire field effect transistors" (2011). Birck and NCN Publications. Paper 992.
http://dx.doi.org/10.1063/1.3587638
Comments
Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at . The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2011) Suprem R. Das, Collin J. Delker, Dmitri Zakharov, Yong P. Chen, Timothy D. Sands, and David B. Janes. This article is distributed under a Creative Commons Attribution 3.0 Unported License.