Analysis of Electron Mobility in Inversion-Mode Al2O3/InxGa1-xAs MOSFETs
Abstract
The electron mobility in Al2O3/InxGa1-xAs (x = 0.53, 0.65, or 0.75) metal-oxide-semiconductor field-effect transistors was analyzed for scattering by oxide charge, as well as interface charge and roughness, and compared with measured transfer characteristics from depletion to inversion. The analysis showed that, under strong inversion, the electron mobility was mainly limited by interface roughness. The extracted interface roughness from the measured data was two to seven times that of the interface between a high-k dielectric and Si, assuming the correlation lengths were comparable. Therefore, to fully benefit from the high bulk mobility of InGaAs, its interface roughness with the gate oxide needs to be further improved.
Keywords
Charge-carrier mobility; gallium compounds; indium compounds; metal-oxide-semiconductor field-effect transistors (MOSFETs); semiconductor device modeling; HIGH-K; SURFACE-ROUGHNESS; PHONON-SCATTERING; TERNARY ALLOYS; GATE STACK; METAL GATE; SI; LAYERS; DIELECTRICS; TRANSISTOR
DOI
10.1109/TED.2011.2146255
Citation
IEEE Transactions on Electron Devices, Volume: 58, Issue: 7, July 2011
Date of this Version
7-2011
Recommended Citation
Wang, Weike; Hwang, James C. M.; Xuan, Yi; and Ye, Peide D., "Analysis of Electron Mobility in Inversion-Mode Al2O3/InxGa1-xAs MOSFETs" (2011). Birck and NCN Publications. Paper 988.
http://dx.doi.org/10.1109/TED.2011.2146255