Abstract

The improvement of the metal/InGaAs interface is essential for the future application of InGaAs metal source/drain Schottky-barrier metal-oxide-semiconductor field-effect-transistors. In this article, on In0.53Ga0.47As, the authors examine the recently proposed method of inserting an ultrathin insulator to modulate the effective Schottky-barrier height (SBH) at the metal/semiconductor interface. Both n-type and p-type In0.53Ga0.47As are investigated by inserting an atomic-layer deposited Al2O3 interlayer. The results indicate that SBH modulation is more effective at the n-InGaAs interface than the p-InGaAs interface for the same Al2O3 thickness. However, the Fermi level at the metal/InGaAs interface is still weakly pinned even after inserting 2 nm Al2O3. The mechanism of the SBH modulation could be attributed to the creation of an electric dipole at the Al2O3/InGaAs interface, which induces a barrier shift. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3610972]

Comments

Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Vacuum Science & Technology B: Volume 29, Issue 4. and may be found at http://dx.doi.org/10.1116/1.3610972. The following article has been submitted to/accepted by Journal of Vacuum Science & Tech. B. Copyright (2011) Runsheng Wang, Min Xu, and Peide D. Ye Ru Huang. This article is distributed under a Creative Commons Attribution 3.0 Unported License.

Keywords

aluminium compounds; atomic layer deposition; Fermi level; gallium arsenide; indium compounds; MOSFET; Schottky barriers; METAL SOURCE/DRAIN; MOSFETS

DOI

10.1116/1.3610972

Citation

Journal of Vacuum Science & Technology B: Volume 29, Issue 4. DOI: 10.1116/1.3610972

Date of this Version

7-2011

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