Electronic properties of grains and grain boundaries in graphene grown by chemical vapor deposition
Abstract
We synthesize hexagonal shaped single-crystal graphene, with edges parallel to the zig-zag orientations, by ambient pressure CVD on polycrystalline Cu foils. We measure the electronic properties of such grains as well as of individual graphene grain boundaries, formed when two grains merged during the growth. The grain boundaries are visualized using Raman mapping of the D band intensity, and we show that individual boundaries between coalesced grains impede electrical transport in graphene and induce prominent weak localization, indicative of intervalley scattering in graphene. (C) 2011 Elsevier Ltd. All rights reserved.
Keywords
Graphene; Chemical vapor deposition; Grain boundary; Electronic transport; LARGE-AREA; FILMS; SIZE
DOI
10.1016/j.ssc.2011.05.023
Citation
Solid State Communications Volume 151, Issue 16, August 2011, Pages 1100–1104
Date of this Version
8-2011
Recommended Citation
Jauregui, Luis A.; Cao, Helin; Wu, Wei; Yu, Qingkai; and Chen, Yong P., "Electronic properties of grains and grain boundaries in graphene grown by chemical vapor deposition" (2011). Birck and NCN Publications. Paper 976.
http://dx.doi.org/10.1016/j.ssc.2011.05.023