Atomic-layer-deposited Al2O3 on Bi2Te3 for topological insulator field-effect transistors
Date of this Version
8-1-2011Citation
Applied Physics Letters, Volume 99, Issue 5. DOI: 10.1063/1.3622306
Abstract
We report dual-gate modulation of topological insulator field-effect transistors (TI FETs) made on Bi2Te3 thin flakes with integration of atomic-layer-deposited (ALD) Al2O3 high-k dielectric. Atomic force microscopy study shows that ALD Al2O3 is uniformly grown on this layer-structured channel material. Electrical characterization reveals that the right selection of ALD precursors and the related surface chemistry play a critical role in device performance of Bi2Te3 based TI FETs. We realize both top-gate and bottom-gate control on these devices, and the highest modulation rate of 76.1% is achieved by using simultaneous dual gate control. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622306]
Discipline(s)
Nanoscience and Nanotechnology
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Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters: Volume 99, Issue 5 and may be found at http://dx.doi.org/10.1063/1.3622306. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2011) Han Liu and Peide D. Ye. This article is distributed under a CreativeAAM Commons Attribution 3.0 Unported License.