Abstract
We explore the relaxation of photoexcited graphene by solving a transient Boltzmann transport equation with electron-phonon (e-ph) and electron-electron (e-e) scattering. Simulations show that when the excited carriers are relaxed by e-ph scattering only, a population inversion can be achieved at energies determined by the photon energy. However, e-e scattering quickly thermalizes the carrier energy distributions washing out the negative optical conductivity peaks. The relaxation rates and carrier multiplication effects are presented as a function of photon energy, graphene doping, and dielectric constant.
Keywords
CARBON NANOTUBES; ELECTRON; DEVICES; LIMITS; FILMS
DOI
10.1103/PhysRevB.84.075449
Citation
Relaxation of optically excited carriers in graphene Raseong Kim, Vasili Perebeinos, and Phaedon Avouris Phys. Rev. B 84, 075449
Date of this Version
8-10-2011
Recommended Citation
Kim, Raseong; Perebeinos, Vasili; and Avouris, Phaedon, "Relaxation of optically excited carriers in graphene" (2011). Birck and NCN Publications. Paper 967.
http://dx.doi.org/10.1103/PhysRevB.84.075449
Comments
This is the published version of Raseong Kim, Vasili Perebeinos, and Phaedon Avouris. (10 August 2011). Relaxation of optically excited carriers in graphene. First published in the Physical Review B and is available online at: https://doi.org/10.1103/PhysRevB.84.075449