Observation of 1D Behavior in Si Nanowires: Toward High-Performance TFETs

Author

• Ramon B. Salazar, Birck Nanotechnology Center, Purdue University
• Saumitra R. Mehrotra, Network for Computational Nanotechnology, Purdue University
• Gerhard Klimeck, Network for Computational Nanotechnology, Purdue UniversityFollow
• Navab Singh, Institute of Microelectronics, Agency for Science, Technology, and Research, Singapore
• Joerg Appenzeller, Birck Nanotechnology Center, Purdue University

Abstract

This article provides experimental evidence of one-dimensional behavior of silicon (Si) nanowires (NWs) at low-temperature through both transfer (Id−VG) and capaci- tance−voltage characteristics. For the first time, operation of Si NWs in the quantum capacitance limit (QCL) is experimentally demonstrated and quantitatively analyzed. This is of relevance since working in the QCL may allow, e.g., tunneling field-effect transistors (TFETs) to achieve higher on-state currents (Ion) and larger on-/off-state current ratios (Ion/Ioff), thus addressing one of the most severe limitations of TFETs. Comparison of the experimental data with simulations finds excellent agreement using a simple capacitor model.

Comments

Nano Letters 2012, 12, 5571-5575

Keywords

Sub-bands, one-dimensional, silicon, nanowire, capacitance, TFET

DOI

10.1021/nl3025664

Citation

Nano Lett., 2012, 12 (11), pp 5571–5575

Date of this Version

10-3-2012

Recommended Citation

Salazar, Ramon B.; Mehrotra, Saumitra R.; Klimeck, Gerhard; Singh, Navab; and Appenzeller, Joerg, "Observation of 1D Behavior in Si Nanowires: Toward High-Performance TFETs" (2012). Birck and NCN Publications. Paper 909.
http://dx.doi.org/10.1021/nl3025664