Observation of 1D Behavior in Si Nanowires: Toward High-Performance TFETs

Ramon B. Salazar, Birck Nanotechnology Center, Purdue University
Saumitra R. Mehrotra, Network for Computational Nanotechnology, Purdue University
Gerhard Klimeck, Network for Computational Nanotechnology, Purdue University
Navab Singh, Institute of Microelectronics, Agency for Science, Technology, and Research, Singapore
Joerg Appenzeller, Birck Nanotechnology Center, Purdue University

Abstract

This article provides experimental evidence of one-dimensional behavior of silicon (Si) nanowires (NWs) at low-temperature through both transfer (Id−VG) and capaci- tance−voltage characteristics. For the first time, operation of Si NWs in the quantum capacitance limit (QCL) is experimentally demonstrated and quantitatively analyzed. This is of relevance since working in the QCL may allow, e.g., tunneling field-effect transistors (TFETs) to achieve higher on-state currents (Ion) and larger on-/off-state current ratios (Ion/Ioff), thus addressing one of the most severe limitations of TFETs. Comparison of the experimental data with simulations finds excellent agreement using a simple capacitor model.

Discipline(s)

Nanoscience and Nanotechnology