Spectroscopy of a Deterministic Single-Donor Device in Silicon

Author

• M. Fuechsle, University of New South Wales
• J. A. Miwa, University of New South Wales
• S. Mahapatra, University of New South Wales
• H. Ryu, Network for Computational Nanotechnology, Purdue University
• S. Lee, Network for Computational Nanotechnology, Purdue University
• O. Warschkow, University of Sydney
• L. C. L. Hollenberg, University of Melbourne
• G. Klimeck, Network for Computational Nanotechnology, Purdue UniversityFollow
• M. Y. Simmons, University of New South Wales

Abstract

We present a single electron transistor (SET) based on an individual phosphorus dopant atom in an epitaxial silicon environment. Using scanning tunneling microscope (STM) hydrogen lithography, the single impurity is deterministically placed with a spatial accuracy of ±1 lattice site within a donor-based transport device. Low temperature transport measurements confirm the presence of the single donor and show that the donor charge state can be precisely controlled via gate voltages. We observe a charging energy that is remarkably similar to the value expected for isolated P donors in bulk silicon, which is in sharp contrast to previous experiments on single-dopant transport devices. We show that atomistic modeling can fully capture the effects of the highly-doped transport electrodes on the electronic states of the donor, thus highlighting the high level of control over the electrostatic device properties afforded by a deterministic single donor architecture. Our fabrication method therefore opens the door for the realization of a scalable donor-based qubit architecture in silicon.

Comments

Proceedings of SPIE, V8400, Article Number: 840006, May 1, 2012

doi: 10.1117/12.919763

Jean Michel Sellier , James E. Fonseca, Gerhard Klimeck, "Archimedes, the free Monte Carlo simulator: A GNU package for submicron semiconductor devices on nanoHUB," Proceedings of SPIE, V8400, Article Number: 840006, May 1, 2012

Copyright 2012 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic electronic or print reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

http://dx.doi.org/10.1117/12.919763

Keywords

Silicon, Quantum Computation, Scanning Tunneling Microscopy (STM), STM lithography, Single-atom devices

DOI

10.1117/12.919763

Citation

Proceedings of SPIE, V8400, Article Number: 840006, May 1, 2012

Date of this Version

5-1-2012

Recommended Citation

Fuechsle, M.; Miwa, J. A.; Mahapatra, S.; Ryu, H.; Lee, S.; Warschkow, O.; Hollenberg, L. C. L.; Klimeck, G.; and Simmons, M. Y., "Spectroscopy of a Deterministic Single-Donor Device in Silicon" (2012). Birck and NCN Publications. Paper 892.
http://dx.doi.org/10.1117/12.919763