Frequency response of LaAlO3/SrTiO3 all-oxide field-effect transistors
Abstract
The frequency response of all oxide field-effect transistors with amorphous LaAlO3 on a crystalline SrTiO3 substrate is reported. The intrinsic cut-off frequencies of 4 mu m gate-length devices are found to be approximately 17 MHz indicating that with gate length scaling gigahertz cut-off frequency is possible. The low cut-off frequency is primarily limited by the low effective mobility. The estimated effective mobility value determined from the S-parameter measurement is 3.8 cm(2)/Vs, which is consistent with previous reports. Small-signal equivalent circuit model parameters are extracted by fitting to on-wafer measured S-parameters. Good agreement is obtained between measured and simulated S-parameters based on the equivalent circuit model. (C) 2012 Elsevier Ltd. All rights reserved.
Keywords
Field-effect transistor; Heterojunction; Lanthanum aluminate; Strontium titanate; INTERFACE
DOI
10.1016/j.sse.2012.05.044
Citation
Solid-State Electronics Volume 76, October 2012, Pages 1–4
Date of this Version
10-2012
Recommended Citation
Liu, Qingmin; Dong, Lin; Liu, Yiqun; Gordon, Roy; Ye, Peide D.; Fay, Patrick; and Seabaugh, Alan, "Frequency response of LaAlO3/SrTiO3 all-oxide field-effect transistors" (2012). Birck and NCN Publications. Paper 890.
http://dx.doi.org/10.1016/j.sse.2012.05.044