Electrical control of ferromagnetic state
Abstract
We report experiments where magnetization in GaMnAs ferromagnetic semiconductor is manipulated via strain or electric current. In both cases, charge carrier holes become partially polarized due to the anisotropic modification of holes spectra caused by spin-orbit interactions, and this polarization exerts spin torque sufficient to rotate ferromagnetic domains. (C) 2012 Elsevier B.V. All rights reserved.
Keywords
Ferromagnetic semiconductor; Spin polarization; Spin-orbit interaction; Multiferroic; EXCHANGE INTERACTION; MAGNETORESISTANCE; SEMICONDUCTORS; FIELD; MAGNETIZATION; RESONANCE
DOI
10.1016/j.jmmm.2012.02.047
Citation
Journal of Magnetism and Magnetic Materials Volume 324, Issue 21, October 2012, Pages 3379–3384
Date of this Version
10-2012
Recommended Citation
Rokhinson, Leonid P.; Overby, Mason; Chernyshov, Alexandr; Lyanda-Geller, Yuli; Liu, Xinyu; and Furdyna, Jacek K., "Electrical control of ferromagnetic state" (2012). Birck and NCN Publications. Paper 882.
http://dx.doi.org/10.1016/j.jmmm.2012.02.047