Polarization Response in InAs Quantum Dots: Theoretical Correlation Between Composition and Electronic Properties
Abstract
III-V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to reproduce experimentally observed polarization properties. In this work, multi-million atom simulations are performed to understand the correlation between chemical composition and polarization properties of QDs. A systematic analysis of QD structural parameters leads us to propose a two layer composition model, mimicking In segregation and In-Ga intermixing effects. This model, consistent with mostly accepted compositional findings, allows to accurately fit the experimental PL spectra. The detailed study of QD morphology parameters presented here serves as a tool for using growth dynamics to engineer the strain field inside and around the QD structures, allowing tuning of the polarization response.
DOI
10.1088/0957-4484/23/16/165202
Citation
Nanotechnology, Volume 23, Number 16
Date of this Version
4-2012
Recommended Citation
Usman, Muhammad; Tasco, Vittorianna; Todaro, Maria Teresa; De Giorgi, Milena; O'Reilly, Eoin P.; Klimeck, Gerhard; and Passaseo, Adriana, "Polarization Response in InAs Quantum Dots: Theoretical Correlation Between Composition and Electronic Properties" (2012). Birck and NCN Publications. Paper 872.
http://dx.doi.org/10.1088/0957-4484/23/16/165202