Built-in Electric Field Minimization in (In, Ga)N Nanoheterostructure
Abstract
(In, Ga)N nanostructures show great promise as the basis for next generation LED lighting technology, for they offer the possibility of directly converting electrical energy into light of any visible wavelength without the use of down-converting phosphors. In this paper, three-dimensional computation of the spatial distribution of the mechanical and electrical equilibrium in nanoheterostructures of arbitarary topologies is used to elucidate the complex interactions between geometry, epitaxial strain, remnant polarization, and piezoelectric and dielectric contributions to the self-induced internal electric fields. For a specific geometry-nanorods with pyramidal caps-we demonstrate that by tuning the quantum well to cladding layer thickness ration, h(w)/h(c), a minimal built-in electric field can be experimentally realized and canceled, in the limit of h(w)/h(c) = 1.28, for large h(c) values.
Keywords
LIGHT-EMITTING-DIODES; MULTIQUANTUM-WELL STRUCTURES; MULTIPLE-QUANTUM WELLS; A-PLANE GAN; LASER-DIODES; EMISSION; EXCITONS; SINGLE; ARRAYS
DOI
10.1021/nl1044605
Citation
Nano Lett., 2011, 11 (11), pp 4515–4519
Date of this Version
11-2011
Recommended Citation
Liang, Zhiwen; Wildeson, Isaac; Colby, Robert; Ewoldt, David; Zhang, Tong; Sands, Timothy; Stach, Eric; Benes, Bedrich; and Garcia, R E., "Built-in Electric Field Minimization in (In, Ga)N Nanoheterostructure" (2011). Birck and NCN Publications. Paper 840.
http://dx.doi.org/10.1021/nl1044605