Scattering in Si-Nanowires - Where Does it Matter?
Abstract
Electron transport is computed in 3nm Si nanowires subject to incoherent scattering from phonons. The electronic structure of the nanowire is represented in an atomistic sp3d5s* tight binding basis. Phonon modes are computed in an atomistic valence force field rather than a continuum deformation potential. Atomistic transport and incoherent scattering are coupled through the non-equilibrium Green function formalism (NEGF) in our new OMEN simulator. Energy loss due to phonon emission is shown to lead to a resistive potential drop in the emitter of the nanowire. Phonon absorption is shown to increase the current in a band-to-band-tunneling configuration.
DOI
10.1109/SNW.2010.5562586
Citation
2010 Silicon Nanoelectronics Workshop (SNW)
Date of this Version
2010
Recommended Citation
Klimeck, Gerhard and Luisier, Mathieu, "Scattering in Si-Nanowires - Where Does it Matter?" (2010). Birck and NCN Publications. Paper 822.
http://dx.doi.org/10.1109/SNW.2010.5562586
Comments
Proceedings of 2010 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI, June 13-14, 2010