Quantum Transport in Ultra-Scaled Phosphorous-Doped Silicon Nanowires

Author

• Hoon Ryu, Purdue University - Main Campus
• S. Lee, Purdue University - Main Campus
• Brent Weber, University of New South Wales
• Suddhasatta Mahapatra, University of New South Wales
• Michelle Y. Simmons, University of New South Wales
• Lloyed Hollenberg, University of Melbourne
• Gerhard Klimeck, Purdue University - Main CampusFollow

Abstract

Highly phosphorous-doped nanowires in silicon (Si:P NW) represent the ultimate nanowire scaling limit of 1 atom thickness and a few atoms width. Experimental data are compared to an atomistic full-band model. Charge-potential self-consistency is computed by solving the exchange-correlation LDA corrected Schrödinger-Poisson equation. Transport through donor bands is observed in [110] Si:P NW at low temperature. The semi-metallic conductance computed in the ballistic regime agrees well with the experiment. Sensitivity of the NW properties on doping constant and placement disorder on the channel is addressed. The modeling confirms that the nanowires are semi-metallic and transport can be gate modulated.

Comments

Proceedings of 2010 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI, June 13-14, 2010.

DOI

10.1109/SNW.2010.5562585

Citation

Proceedings of 2010 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI, June 13-14, 2010.

Date of this Version

2010

Recommended Citation

Ryu, Hoon; Lee, S.; Weber, Brent; Mahapatra, Suddhasatta; Simmons, Michelle Y.; Hollenberg, Lloyed; and Klimeck, Gerhard, "Quantum Transport in Ultra-Scaled Phosphorous-Doped Silicon Nanowires" (2010). Birck and NCN Publications. Paper 821.
http://dx.doi.org/10.1109/SNW.2010.5562585