Physics and Statistics of Non-Ohmic Shunt Conduction and Metastability in Amorphous Silicon p-i-n Solar Cells
Abstract
In this paper, we present a physical model of the non- Ohmic shunt current ISH in amorphous silicon (a-Si:H) p–i–n solar cells and validate it with detailed measurements. This model is based on space-charge-limited (SCL) transport through localized p–i–p shunt paths. These paths can arise from n-contact metal incorporation in the a-Si:H layer, causing the (n)a-Si:H to be counterdoped to p-type. The model not only explains all the electrical characteristics of preexisting shunts but also provides insight into the metastable switching that is observed in the shunt-dominated region of dark current as well.We first verify the SCL model using simulations and statistically robust measurements, and then use it to analyze our systematic observations of nonvolatile switching of the low-bias dark characteristics. This study interprets broad experimental observations regarding shunt behavior, and suggests possible techniques for alleviating shunt-induced performance and reliability issues.
Keywords
thin film solar, shunt, metastable, amorphous silicon, switching
DOI
10.1109/JPHOTOV.2011.2174030
Citation
IEEE Journal of Photovoltaics ( Volume: 1, Issue: 2, Oct. 2011 )
Date of this Version
12-2011
Recommended Citation
Dongaonkar, Sourabh; Yogendra, karthik; Mahapatra, Souvik; and Alam, Muhammad A., "Physics and Statistics of Non-Ohmic Shunt Conduction and Metastability in Amorphous Silicon p-i-n Solar Cells" (2011). Birck and NCN Publications. Paper 812.
http://dx.doi.org/10.1109/JPHOTOV.2011.2174030