Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO/OMEN
Abstract
The Nanoelectronic Modeling (NEMO) Toolset has been continually developed over the past 15 years to provide insight into nano-scale semiconductor devices that are dominated by quantum mechanical effects. The ability to represent realistically large devices in an atomistic basis has been the key element to match experimental data and to guide experiments. Now these insights flow into the creation of a new simulation engine called OMEN. Critical modeling requirements, scaling on parallel computers, and sample scientific results are discussed.
DOI
10.1109/MCSE.2010.32
Citation
IEEE Computing in Science and Engineering (CISE), Vol. 12, 28-35, 2010.
Date of this Version
2010
Recommended Citation
Klimeck, Gerhard and Luisier, Mathieu, "Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO/OMEN" (2010). Birck and NCN Publications. Paper 811.
http://dx.doi.org/10.1109/MCSE.2010.32
Comments
This article has been accepted for publication in Computing in Science and Engineering but has not yet been fully edited. Some content may change prior to final publication.