Abstract

We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower energy states due perpendicular valley (and spin) configurations, offering an additional current path. By employing a detailed temperature dependence study in combination with a rate equation model, we estimate the lifetime of this particular state to exceed 48 ns. The two-electron spin-valley configurations of all relevant confined quantum states in our device were obtained by a large-scale atomistic tight-binding simulation. The LET acts as a signature of the complicated valley physics in silicon; a feature that becomes increasingly important in silicon quantum devices.

Comments

This is the published version of G. P. Lansbergen, R. Rahman, J. Verduijn, G. C. Tettamanzi, N. Collaert, S. Biesemans, G. Klimeck, L. C. L. Hollenberg, and S. Rogge. (19 September 2011). "Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade". First published in the Physical Review Letters and is available online at: http://dx.doi.org/10.1103/PhysRevLett.107.136602

DOI

10.1103/PhysRevLett.107.136602

Citation

Phys. Rev. Letters Vol. 107, No. 13 (2011)

Date of this Version

9-23-2011

Download

Share

COinS