Full Band Modeling of Homo-junction InGaAs Band-to-Band Tunneling Diodes Including Band Gap Narrowing

Author

• Woo-Suhl Cho, Purdue University - Main Campus
• Mathieu Luisier, Purdue University - Main Campus
• Dheeraj Mohata, Pennsylvania State University
• Suman Datta, Pennsylvania State University
• David Pawlik, Rochester Institute of Technology
• Sean L. Rommel, Rochester Institute of Technology

Abstract

A homo-junction In0.53Ga0.47As tunneling diode is investigated using full-band, atomistic quantum transport approach based on a tight-binding model (TB) and the Non-equilibrium Green’s Function formalism. Band gap narrowing (BGN) is included in TB by altering its parameters using the Jain-Roulston model. BGN is found to be critical in the determination of the current peak and the second turn-on in the forward bias region. An empirical excess current that mimics additional recombination paths must be added to the calculation to model the diode behavior in the valley current region. Overall the presented model reproduces experimental data well.

Comments

This is the published version of Sunhee Lee, Hoon Ryu, Huw Campbell, Lloyd C. L. Hollenberg, Michelle Y. Simmons, and Gerhard Klimeck. (14 November 2011). "Electronic structure of realistically extended atomistically resolved disordered Si:P δ -doped layers". First published in the Physical Review B and is available online at: http://dx.doi.org/10.1103/PhysRevB.84.205309

DOI

10.1103/PhysRevB.84.205309

Citation

Physical Review B: Volume 84, Issue 20 -- 15 November 2011

Date of this Version

2011

Recommended Citation

Cho, Woo-Suhl; Luisier, Mathieu; Mohata, Dheeraj; Datta, Suman; Pawlik, David; and Rommel, Sean L., "Full Band Modeling of Homo-junction InGaAs Band-to-Band Tunneling Diodes Including Band Gap Narrowing" (2011). Birck and NCN Publications. Paper 790.
http://dx.doi.org/10.1103/PhysRevB.84.205309