Strain induced pseudomagnetic field for novel graphene electronics

tony low, Purdue University - Main Campus

Date of this Version



T. Low and F. Guinea, Nano Letter 10, 3551 (2010)

This document has been peer-reviewed.



Nano Lett., 2010, 10 (9), pp 3551–3554 DOI: 10.1021/nl1018063


Particular strain geometry in graphene could lead to a uniform pseudomagnetic field of order 10T and might open up interesting applications in graphene nanoelectronics. Through quantum transport calculations of realistic strained graphene flakes of sizes of 100 nm, we examine possible means of exploiting this effect for practical electronics and valleytronics devices. First, we found that elastic backscattering at rough edges leads to the formation of well-defined transport gaps of order 100 meV under moderate maximum strain of 10%. Second, the application of a real magnetic field induced a separation, in space and energy, of the states arising from different valleys, leading to a way of inducing bulk valley polarization which is insensitive to short-range scattering.


Condensed Matter Physics | Engineering Physics | Quantum Physics