Strain induced pseudomagnetic field for novel graphene electronics
Abstract
Particular strain geometry in graphene could lead to a uniform pseudomagnetic field of order 10T and might open up interesting applications in graphene nanoelectronics. Through quantum transport calculations of realistic strained graphene flakes of sizes of 100 nm, we examine possible means of exploiting this effect for practical electronics and valleytronics devices. First, we found that elastic backscattering at rough edges leads to the formation of well-defined transport gaps of order 100 meV under moderate maximum strain of 10%. Second, the application of a real magnetic field induced a separation, in space and energy, of the states arising from different valleys, leading to a way of inducing bulk valley polarization which is insensitive to short-range scattering.
DOI
10.1021/nl1018063
Citation
T. Low and F. Guinea, Nano Letter 10, 3551 (2010)
Date of this Version
8-17-2010
Recommended Citation
low, tony, "Strain induced pseudomagnetic field for novel graphene electronics" (2010). Birck and NCN Publications. Paper 745.
http://dx.doi.org/10.1021/nl1018063
Comments
Nano Lett., 2010, 10 (9), pp 3551–3554 DOI: 10.1021/nl1018063