Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN
Abstract
Researchs have continually developed the Nanoelectronic Modeling (NEMO) toolset over the past 15 years to provide insight into nanoscale semiconductor devices that are dominated by quantum mechanical effects. The ability to represent realistically large devices on an atomistic basis has been the key element in matching experimental data and guiding experiments. The resulting insights led to the creation of OMEN, a new simulation engine.
Keywords
NEMO, OMEN, atomistic modeling, semiconductor devices
DOI
10.1109/MCSE.2010.32
Citation
G. Klimeck and M. Luisier, "Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN," in Computing in Science & Engineering, vol. 12, no. 2, pp. 28-35, March-April 2010. doi: 10.1109/MCSE.2010.32
Date of this Version
4-2010
Recommended Citation
Klimeck, Gerhard and Luisier, Mathieu, "Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN" (2010). Birck and NCN Publications. Paper 743.
http://dx.doi.org/10.1109/MCSE.2010.32
Comments
G. Klimeck and M. Luisier, "Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN," in Computing in Science & Engineering, vol. 12, no. 2, pp. 28-35, March-April 2010.
doi: 10.1109/MCSE.2010.32