Scattering in Si-nanowires - Where Does it Matter?
Abstract
Electron transport is computed in 3nm Si nanowires subject to incoherent scattering from phonons. The electronic structure of the nanowire is represented in an atomistic sp3d5s* tight binding basis. Phonon modes are computed in an atomistic valence force field rather than a continuum deformation potential. Atomistic transport and incoherent scattering are coupled through the non-equilibrium Green function formalism (NEGF) in our new OMEN simulator. Energy loss due to phonon emission is shown to lead to a resistive potential drop in the emitter of the nanowire. Phonon absorption is shown to increase the current in a band-to-band-tunneling configuration.
Keywords
Green's function methods, elemental semiconductors, nanowires, phonons, semiconductor quantum wires, silicon, tight-binding calculations, tunnelling
DOI
10.1109/SNW.2010.5562586
Date of this Version
9-2-2010
Recommended Citation
Klimeck, Gerhard and Luiser, Mathieu, "Scattering in Si-nanowires - Where Does it Matter?" (2010). Birck and NCN Publications. Paper 741.
http://dx.doi.org/10.1109/SNW.2010.5562586