Quantum Transport in Ultra-Scaled Phosphorous-Doped Silicon Nanowires

Author

• Hoon Ryu, Purdue University - Main Campus
• S. Lee, Purdue University - Main Campus
• B. Weber, Purdue University - Main Campus
• S. Mahapatra, Purdue University - Main Campus
• M. Y. Simmons, Purdue University - Main Campus
• L. C.L. Hollenberg, Purdue University - Main Campus
• Gerhard Klimeck, Purdue University - Main CampusFollow

Abstract

Highly phosphorous-doped nanowires in silicon (Si:P NW) represent the ultimate nanowire scaling limit of 1 atom thickness and a few atoms width. Experimental data are compared to an atomistic full-band model. Charge-potential self-consistency is computed by solving the exchange-correlation LDA corrected Schrödinger-Poisson equation. Transport through donor bands is observed in [110] Si:P NW at low temperature. The semi-metallic conductance computed in the ballistic regime agrees well with the experiment. Sensitivity of the NW properties on doping constant and placement disorder on the channel is addressed. The modeling confirms that the nanowires are semi-metallic and transport can be gate modulated.

Keywords

Poisson equation, Schrodinger equation, density functional theory, electrical conductivity, electronic structure, elemental semiconductors, exchange interactions (electron), heavily doped semiconductors, nanowires, phosphorus, semiconductor doping, semiconductor quantum wires, silicon, tight-binding calculations

DOI

10.1109/SNW.2010.5562585

Citation

Silicon Nanoelectronics Workshop (SNW) 2010, pp. 1-2, 13-14 June 2010

Date of this Version

9-2-2010

Recommended Citation

Ryu, Hoon; Lee, S.; Weber, B.; Mahapatra, S.; Simmons, M. Y.; Hollenberg, L. C.L.; and Klimeck, Gerhard, "Quantum Transport in Ultra-Scaled Phosphorous-Doped Silicon Nanowires" (2010). Birck and NCN Publications. Paper 740.
http://dx.doi.org/10.1109/SNW.2010.5562585