Stark Tuning of the Charge States of a Two-Donor Molecule in Silicon

Author

• Rajib Rahman, NCN, Purdue University
• Seung H. Park, NCN, Purdue University
• Gerhard Klimeck, NCN, Purdue UniversityFollow
• Lloyd C. L. Hollenberg, University of Melbourne, Australia

Abstract

Gate control of phosphorus donor based charge qubits in Si is investigated using a tight-binding approach. Excited molecular states of P2+ are found to impose limits on the allowed donor sepa- rations and operating gate voltages. The effects of surface (S) and barrier (B) gates are analyzed in various voltage regimes with respect to the quantum confined states of the whole device. Effects such as interface ionization, saturation of the tunnel coupling, sensitivity to donor and gate place- ment are also studied. It is found that realistic gate control is smooth for any donor separation, although at certain donor orientations the S and B gates may get switched in functionality. This paper outlines and analyzes the various issues that are of importance in practical control of such donor molecular systems.

Comments

arXiv:0907.3929v1 [cond-mat.mes-hall] 22 Jul 2009

Keywords

Stark tuning, two-donor molecule, silicon

Date of this Version

7-22-2009

Recommended Citation

Rahman, Rajib; Park, Seung H.; Klimeck, Gerhard; and Hollenberg, Lloyd C. L., "Stark Tuning of the Charge States of a Two-Donor Molecule in Silicon" (2009). Birck and NCN Publications. Paper 728.
https://docs.lib.purdue.edu/nanopub/728