Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs

Author

• S. Deora, Indian Institute of Bombay
• Abhijeet Paul, NCN, Purdue University
• R. Bijesh, Indian Institute of Bombay
• J. Huang, Sematech, Austin
• Gerhard Klimeck, NCN, Purdue UniversityFollow
• G. Bersuker, Sematech, Austin
• P. D. Krisch, Sematech, Austin
• R. Jammy, Sematech, Austin

Abstract

In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs. Compared to Si channel, strained SiGe channel allows larger hole mobility (μh) in the transport direction and alleviates charge flow towards the gate oxide. μh enhancement by 40% in SiGe and 100% in Si-cap SiGe is observed compared to the Si hole universal mobility. A ~40% reduction in NBTI degradation, gate leakage and flicker noise (1/f) is observed which is attributed to a 4% increase in the hole-oxide barrier height (φ) in SiGe. Similar field acceleration factor (Γ) for threshold voltage shift (ΔVT) and increase in noise (ΔSVG) in Si and SiGe suggests identical degradation mechanisms.

Comments

S. Deora, A. Paul, R. Bijesh, J. Huang, G. Klimeck, G. Bersuker, P. D. Krisch, R. Jammy. Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs IEEE Electron Device Letters ( Volume: 32, Issue: 3, March 2011 ) doi: 10.1109/LED.2010.2099101

Keywords

Gate leakage, p-MOSFET, negative bias temperature instability (NBTI), SiGe, Tight-Binding.

DOI

10.1109/LED.2010.2099101

Citation

IEEE Electron Device Letters ( Volume: 32, Issue: 3, March 2011 )

Date of this Version

12-6-2010

Recommended Citation

Deora, S.; Paul, Abhijeet; Bijesh, R.; Huang, J.; Klimeck, Gerhard; Bersuker, G.; Krisch, P. D.; and Jammy, R., "Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs" (2010). Birck and NCN Publications. Paper 725.
http://dx.doi.org/10.1109/LED.2010.2099101