Abstract
Atomically resolved scanning tunneling microscope images of carbon ridge defects found in few-layer graphene formed on the C-face (0001) of 4H-silicon carbide reveal a striated exterior surface formed from out-of-plane distortions of the hexagonal graphene lattice. While ridge formation is likely explained by compressive in-plane stresses coupled with the small values of the bending modulus for few-layer graphene, the striated structure along the ridges argues for a localized unidirectional stress in the material directed along the ridge length.
Keywords
elemental semiconductors; graphene; scanning tunnelling microscopy; semiconductor epitaxial layers
DOI
10.1063/1.3323092
Citation
Appl. Phys. Lett. 96, 081905 (2010)
Date of this Version
2-2010
Recommended Citation
Harrison, Sara E.; Capano, Michael A.; and Reifenberger, R., "Scanning tunneling microscope study of striated carbon ridges in few-layer epitaxial graphene formed on 4H-silicon carbide (0001)" (2010). Birck and NCN Publications. Paper 672.
http://dx.doi.org/10.1063/1.3323092
Comments
Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 96, 081905 (2010) and may be found at http://dx.doi.org/10.1063/1.3323092. The following article has been submitted to/accepted by Applied Physics Letters. Copyright (2010) S. E. Harrison, M. A. Capano, and R. Reifenberger. This article is distributed under a Creative Commons Attribution 3.0 Unported License.