Formation of the ST12 phase in nanocrystalline Ge at ambient pressure

Author

• Suk Jun Kim, Purdue University - Main Campus
• Ong Khac Quy, Purdue University - Main CampusFollow
• Ling-Shao Chang, Purdue University - Main Campus
• E A. Stach, Birck Nanotechnology Center and School of Materials Engineering, Purdue UniversityFollow
• Carol A. Handwerker, Purdue University - Main CampusFollow
• Alexander Wei, Purdue UniversityFollow

Abstract

Amorphous nanophase germanium can crystallize into a high-energy tetragonal phase (Ge-III/ST12) upon thermal annealing, particularly when prepared by the naphthalide-mediated reduction of GeCl4 and subsequent treatment with t-BuMgCl. The formation of ST12-Ge is typically associated with high pressure, yet the nucleation and coalescence of this phase can be observed by in situ transmission electron microscopy at low pressure and at temperatures well below 200 degrees C, and can persist at temperatures of up to 500 degrees C. The low coalescence temperature of nanophase ST12-Ge suggests its compatibility with applications in direct-print electronics.

Keywords

PRINTED ELECTRONICS; GERMANIUM; NANOPARTICLES; PARTICLES; FILMS; TRANSISTORS; SILICON

DOI

10.1039/b915841c

Citation

Journal of Materials Chemistry, 2010, 20, 331-337

Date of this Version

2010

Recommended Citation

Kim, Suk Jun; Quy, Ong Khac; Chang, Ling-Shao; Stach, E A.; Handwerker, Carol A.; and Wei, Alexander, "Formation of the ST12 phase in nanocrystalline Ge at ambient pressure" (2010). Birck and NCN Publications. Paper 664.
http://dx.doi.org/10.1039/b915841c